Platinum-free ferroelectric memory cell with intermetallic barrier layer and method of making same

US5777356A · kind A · utility

Assignee

• Bell Communications Research, Inc. · US

Inventors

• Anil M. Dhote · College Park, US
• Ramamoorthy Ramesh · Moraga, US

Key dates

• Filing date: Jan 3, 1996
• Grant date: Jul 7, 1998
• Expiry date: Jan 3, 2016

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10D1/682

Abstract

A ferroelectric memory cell integrated on a silicon substrate. The ferroelectric stack includes a ferroelectric layer, such as PbNbZrTiO, sandwiched between conductive metal-oxide electrodes, such as the perovskite LaSrCoO. The ferroelectric stack is grown over a barrier layer of an intermetallic alloy such as Ni.sub.3 Al or Ti.sub.3 Al, which is highly resistant to oxidation at elevated temperatures. The intermetallic layer is either deposited directly over the silicon substrate or over an intermediate TiN layer. The resulting structure does not require a platinum barrier layer.