Method for forming of a silicon oxide layer on a topography

US5780103A · kind A · utility

Assignee

• Siemens Aktiengesellschaft · DE

Inventors

• Dirk Toebben · Fishkill, US
• Doerthe Groteloh · Regensburg, DE
• Oswald Spindler · Vaterstetten, DE
• Michael Rogalli · Rottenburg am Neckar, DE

Key dates

• Filing date: Dec 20, 1996
• Grant date: Jul 14, 1998
• Expiry date: Dec 20, 2016

Classification

• Technology area (CPC H): Electricity
• CPC primary: H01L21/02282
• WIPO field: Semiconductors
• WIPO sector: Electrical engineering

Abstract

A method for depositing an SiO.sub.2 layer, which acts as an inter-metal dielectric (IMD), is provided. The method includes the steps of applying to the topography an organodisiloxane which is dissolved in an organic solvent, the organodisiloxane is then polymerized, and the polymer formed is decomposed, the polymer changing in the process to become an SiO.sub.2 -rich layer. The method of the present invention results in SiO.sub.2 layers which achieve an excellent local and global degree of planarization and have a distinctly lower dielectric constant than SiO.sub.2 layers prepared using conventional methods.