Method for growing a II-VI compound semiconductor layer containing cadmium and method for fabricating a semiconductor laser
US5780322A · kind A · utility
9Cited by
4References
12Claims
0Family size
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Key dates
| Filing date | Sep 27, 1996 |
| Grant date | Jul 14, 1998 |
| Priority date | — |
| Expiry date | Sep 27, 2016 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S438/93
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method for growing a II-VI compound semiconductor layer containing Cd, such as Zn.sub.1-x Cd.sub.x Se, by a molecular beam epitaxy method is disclosed. During the growth, the ratio of the intensity of molecular beams of a group VI element to the intensity of molecular beams of a group II element in terms of intensities of molecular beams actually irradiated onto a substrate, namely, the substantial VI/II ratio, is controlled preferably in the range from 0.7 to 1.3, to increase the Cd incorporating efficiency into the grown layer sufficiently high.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.