Koshi Tamamura
21Patents
7h-index
30Co-inventors
69Inventor score
Filing activity: Sep 13, 1995 → Dec 16, 2015
Most-cited inventions
| Patent | Title | Area | Cited by | Status |
|---|---|---|---|---|
| US6875082B2 | Nitride semiconductor wafer and method of processing nitride semiconductor wafer | Emerging Cross-Sectional Technologies | 16 | Expired |
| US9277865B2 | Estimating apparatus and estimating method | Human Necessities | 10 | Active |
| US6024794A | Determination of critical film thickness of a compound semiconductor layer, and a method for manufacturing a semiconductor device using the method of determination | Electricity | 9 | Expired |
| US7786488B2 | Nitride semiconductor wafer and method of processing nitride semiconductor wafer | Emerging Cross-Sectional Technologies | 9 | Active |
| US5780322A | Method for growing a II-VI compound semiconductor layer containing cadmium and method for fabricating a semiconductor laser | Emerging Cross-Sectional Technologies | 9 | Expired |
| US7535082B2 | Nitride semiconductor wafer and method of processing nitride semiconductor wafer | Emerging Cross-Sectional Technologies | 8 | Expired |
| US5695556A | Determination of critical film thickness of a compound semiconductor layer, and a method for manufacturing a semiconductor device using the method of determination | Electricity | 7 | Expired |
| US5989339A | MBE system and semiconductor device fabricated, using same | Electricity | 6 | Expired |
| US8008165B2 | Nitride semiconductor wafer and method of processing nitride semiconductor wafer | Emerging Cross-Sectional Technologies | 6 | Active |
| US7091056B2 | Method of manufacturing a semiconductor light emitting device, semiconductor light emitting device, method of manufacturing a semiconductor device, semiconductor device, method of manufacturing a device, and device | Electricity | 6 | Expired |
| US9247882B2 | Dental apparatus, image acquisition method, and information processing apparatus | Physics | 5 | Active |
| US10219685B2 | Dental apparatus, image acquisition method, and information processing apparatus | Physics | 5 | Active |
| US6084251A | Semiconductor light emitting device with carrier diffusion suppressing layer | Electricity | 5 | Expired |
| US7176499B2 | Method of manufacturing a semiconductor light emitting device, semiconductor light emitting device, method of manufacturing a semiconductor device, semiconductor device, method of manufacturing a device, and device | Electricity | 4 | Expired |
| US5949093A | Semiconductor light emitting device with current blocking region | Electricity | 3 | Expired |
| US5865897A | Method of producing film of nitrogen-doped II-VI group compound semiconductor | Electricity | 2 | Expired |
| US8618506B2 | Fluorescence life measuring apparatus, fluorescence life measuring method and program | Physics | 0 | Active |
| US8050305B2 | Semiconductor device | Electricity | 0 | Active |
| US9480405B2 | Photodynamic diagnosis apparatus, photodynamic diagnosis method and device | Physics | 0 | Active |
| US7899104B2 | EL semiconductor device | Electricity | 0 | Active |
| US7772586B2 | Optical semiconductor devices on InP substrate | Electricity | 0 | Active |
Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.