Method of producing high quality silicon surface for selective epitaxial growth of silicon
US5780343A · kind A · utility
Assignee
Inventor
Key dates
| Filing date | Dec 20, 1995 |
| Grant date | Jul 14, 1998 |
| Priority date | — |
| Expiry date | Dec 20, 2015 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S438/974
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method of producing a high quality silicon surface prior to carrying out a selective epitaxial growth of silicon process for forming an active device region on a substrate. The process flow of the present invention eliminates the need for the sacrificial oxidation layer typically used in such processes. After the etching of a seed hole through the isolation oxide layer using a reactive ion etch a short, low power C.sub.2 F.sub.6 etch is performed. The present invention provides a simple and cost-effective way to eliminate reactive ion etch damage prior to SEG growth because the dry C.sub.2 F.sub.6 etch can be done in the same etch reactor in which the seed hole oxide etch is performed. In addition, the re-oxidation (sacrificial oxide) step is eliminated, reducing the number of process steps.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.