Inventor · Champaign, IL, US

Rashid Bashir

63Patents
20h-index
81Co-inventors
91Inventor score

Filing activity: Dec 31, 1991 → Jun 10, 2023

Most-cited inventions

PatentTitleAreaCited byStatus
US6716620B2 Biosensor and related method Physics 207 Expired
US5780343A Method of producing high quality silicon surface for selective epitaxial growth of silicon Emerging Cross-Sectional Technologies 116 Expired
US6012335A High sensitivity micro-machined pressure sensors and acoustic transducers Performing Operations; Transporting 95 Expired
US5914523A Semiconductor device trench isolation structure with polysilicon bias voltage contact Electricity 73 Expired
US6935165B2 Microscale sensor element and related device and method of use Physics 73 Expired
US6121148A Semiconductor device trench isolation structure with polysilicon bias voltage contact Electricity 66 Expired
US5439833A Method of making truly complementary and self-aligned bipolar and CMOS transistor structures with minimized base and gate resistances and parasitic capacitance Emerging Cross-Sectional Technologies 66 Expired
US8945912B2 DNA sequencing and amplification systems using nanoscale field effect sensor arrays Physics 62 Active
US7306924B2 Biosensor and related method Physics 59 Expired
US5773350A Method for forming a self-aligned bipolar junction transistor with silicide extrinsic base contacts and selective epitaxial grown intrinsic base Emerging Cross-Sectional Technologies 57 Expired
US5811315A Method of forming and planarizing deep isolation trenches in a silicon-on-insulator (SOI) structure Emerging Cross-Sectional Technologies 47 Expired
US5747353A Method of making surface micro-machined accelerometer using silicon-on-insulator technology Emerging Cross-Sectional Technologies 44 Expired
US5930635A Complementary Si/SiGe heterojunction bipolar technology Electricity 37 Expired
US5411913A Simple planarized trench isolation and field oxide formation using poly-silicon Electricity 34 Expired
US5385861A Planarized trench and field oxide and poly isolation scheme Emerging Cross-Sectional Technologies 29 Expired
US5683932A Method of fabricating a planarized trench and field oxide isolation structure Emerging Cross-Sectional Technologies 26 Expired
US5888845A Method of making high sensitivity micro-machined pressure sensors and acoustic transducers Performing Operations; Transporting 24 Expired
US6362064B1 Elimination of walkout in high voltage trench isolated devices Electricity 24 Expired
US9689835B2 Amplified dual-gate bio field effect transistor Electricity 22 Active
US5397722A Process for making self-aligned source/drain polysilicon or polysilicide contacts in field effect transistors Emerging Cross-Sectional Technologies 21 Expired
US6346452B1 Method for controlling an N-type dopant concentration depth profile in bipolar transistor epitaxial layers Electricity 19 Expired
US7435579B2 Biosensor and related method Physics 19 Active
US5827762A Method for forming buried interconnect structue having stability at high temperatures Electricity 18 Expired
US5691232A Planarized trench and field oxide isolation scheme Emerging Cross-Sectional Technologies 18 Expired
US7413891B2 Apparatus and method for detecting live cells with an integrated filter and growth detection device Emerging Cross-Sectional Technologies 17 Expired

Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.