CoSi.sub.2 salicide method

US5780362A · kind A · utility

Inventors

• Qingfeng Wang · Plano, US
• Karen Maex · Herent, BE

Key dates

• Filing date: Jun 4, 1996
• Grant date: Jul 14, 1998
• Expiry date: Jun 4, 2016

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10D30/0212

Abstract

The present invention relates to a method for forming cobalt disilicide structure on a silicon substrate comprising the steps of depositing a cobalt layer on the substrate, thereafter depositing a refractory metal on the cobalt layer, thereby forming a bilayer structure on the said substrate, and heating the bilayer structure. The present invention also relates to a method for forming self-aligned cobalt disilicide on a metal oxide semiconductor transistor with a source drain and gate regions in a silicon substrate comprising the steps of: depositing a cobalt layer on the substrate, thereafter depositing a refractory metal layer on the cobalt layer, heating the silicon substrate, thereby forming a cobalt dislicide layer on the gate, source, and drain regions of the MOS transistor, and selectively etching the remaining nonsilicide cobalt and refractory metal from the substrate except from the source, drain, and gate regions.