Karen Maex
27Patents
14h-index
42Co-inventors
77Inventor score
Filing activity: Oct 6, 1992 → Jan 22, 2009
Most-cited inventions
| Patent | Title | Area | Cited by | Status |
|---|---|---|---|---|
| US6391785B1 | Method for bottomless deposition of barrier layers in integrated circuit metallization schemes | Electricity | 362 | Expired |
| US6852635B2 | Method for bottomless deposition of barrier layers in integrated circuit metallization schemes | Electricity | 95 | Expired |
| US6664192B2 | Method for bottomless deposition of barrier layers in integrated circuit metallization schemes | Electricity | 55 | Expired |
| US5780362A | CoSi.sub.2 salicide method | Electricity | 42 | Expired |
| US6720245B2 | Method of fabrication and device for electromagnetic-shielding structures in a damascene-based interconnect scheme | Electricity | 31 | Expired |
| US5271084A | Method and device for measuring temperature radiation using a pyrometer wherein compensation lamps are used | Physics | 28 | Expired |
| US6662631B2 | Method and apparatus for characterization of porous films | Physics | 25 | Expired |
| US7319274B2 | Methods for selective integration of airgaps and devices made by such methods | Electricity | 24 | Expired |
| US6635964B2 | Metallization structure on a fluorine-containing dielectric and a method for fabrication thereof | Electricity | 23 | Expired |
| US6153484A | Etching process of CoSi.sub.2 layers | Emerging Cross-Sectional Technologies | 22 | Expired |
| US7078352B2 | Methods for selective integration of airgaps and devices made by such methods | Electricity | 19 | Expired |
| US7037851B2 | Methods for selective integration of airgaps and devices made by such methods | Electricity | 17 | Expired |
| US6495453B1 | Method for improving the quality of a metal layer deposited from a plating bath | Electricity | 16 | Expired |
| US6593251B2 | Method to produce a porous oxygen-silicon layer | Electricity | 14 | Expired |
| US6245489A | Fluorinated hard mask for micropatterning of polymers | Electricity | 14 | Expired |
| US6323555A | Metallization structure on a fluorine-containing dielectric and a method for fabrication thereof | Electricity | 11 | Expired |
| US6435008B2 | Apparatus and method for determining porosity | Physics | 11 | Expired |
| US7124377B2 | Design method for essentially digital systems and components thereof and essentially digital systems made in accordance with the method | Physics | 10 | Expired |
| US6255227A | Etching process of CoSi2 layers | Emerging Cross-Sectional Technologies | 9 | Expired |
| US6319736A | Apparatus and method for determining porosity | Physics | 6 | Expired |
| US6844266B2 | Anisotropic etching of organic-containing insulating layers | Electricity | 6 | Expired |
| US7016028B2 | Method and apparatus for defect detection | Physics | 4 | Expired |
| US7790600B2 | Synthesis of zeolite crystals and formation of carbon nanostructures in patterned structures | Performing Operations; Transporting | 4 | Active |
| US7042091B2 | Fluorinated hard mask for micropatterning of polymers | Electricity | 4 | Expired |
| US6821884B2 | Method of fabricating a semiconductor device | Electricity | 1 | Expired |
Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.