Sputtering target with ultra-fine, oriented grains and method of making same
US5780755A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Oct 30, 1995 |
| Grant date | Jul 14, 1998 |
| Priority date | — |
| Expiry date | Oct 30, 2015 |
Classification
- Technology area (CPC B)Performing Operations; Transporting
- CPC primaryB22F2998/10
- WIPO fieldMaterials, metallurgy
- WIPO sectorChemistry
Abstract
A sputtering target comprising a body of metal such as aluminum and its alloy with an ultrafine grain size and small second phase. Also described is a method for making an ultra-fine grain sputtering target comprising melting, atomizing, and depositing atomized metal to form a workpiece, and fabricating the workpiece to form a sputtering target. A method is also disclosed that includes the steps of extruding a workpiece through a die having contiguous, transverse inlet and outlet channels of substantially identical cross section, and fabricating the extruded article into a sputtering target. The extrusion may be performed several times, producing grain size of still smaller size and controlled grain texture.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.