Accelerometers using silicon on insulator technology
US5780885A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Aug 15, 1996 |
| Grant date | Jul 14, 1998 |
| Priority date | — |
| Expiry date | Aug 15, 2016 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S73/04
- WIPO fieldMeasurement
- WIPO sectorInstruments
Abstract
Process for the production of accelerometers using the silicon on insulator method. The process comprises the following stages: a) producing a conductive monocrystalline silicon film on a silicon substrate and separated from the latter by an insulating layer; b) etching the silicon film and the insulating layer up to the substrate in order to fix the shape of the mobile elements and the measuring device; c) producing electric contacts for the measuring devices; d) partial elimination of the insulating layer in order to free the mobile elements, the remainder of the insulating layer rendering integral the substrate and the moving elements.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.