Delta doped and counter doped dynamic threshold voltage MOSFET for ultra-low voltage operation
US5780899A · kind A · utility
172Cited by
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4Claims
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Key dates
| Filing date | Sep 27, 1995 |
| Grant date | Jul 14, 1998 |
| Priority date | — |
| Expiry date | Sep 27, 2015 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D30/721
Abstract
A dynamic threshold voltage IGFET such as a MOSFET is operable at voltages of 0.6 volt or less. The threshold voltage of the transistor is reduced to zero volt or less by interconnecting the gate contact and the device body in which the voltage controlled channel is located. The channel region is delta-doped or counter-doped which permits superior performance for high-end VSLI applications. A selective epitaxy on a counter-doped substrate can be used in a counter-doped device. Doped wells can be used in a bulk silicon substrate in forming the devices. Trenching can be used to isolate devices in the doped wells.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.