Negative ion deductive source for etching high aspect ratio structures
US5783102A · kind A · utility
31Cited by
11References
17Claims
0Family size
Assignee
Inventor
Key dates
| Filing date | Feb 5, 1996 |
| Grant date | Jul 21, 1998 |
| Priority date | — |
| Expiry date | Feb 5, 2016 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH05H1/46
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
A method of manufacturing semiconductor chips uses negative plasma etching. The plasma may be produced by an inductive plasma source. A magnetic field is used to reduce diffusion of hot electrons, producing a uniform negative plasma to etch a work piece.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.