Method for forming a dielectric film and method for fabricating a capacitor using the same
US5783253A · kind A · utility
Assignee
Inventor
Key dates
| Filing date | Mar 5, 1997 |
| Grant date | Jul 21, 1998 |
| Priority date | — |
| Expiry date | Mar 5, 2017 |
Classification
- Technology area (CPC C)Chemistry; Metallurgy
- CPC primaryC23C16/409
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
The present invention provides a method of forming a high strength dielectric film which provides a high dielectric constant for a high density device, and a method of fabricating a capacitor using such a method. The method includes a two step process where one of the steps provides a composition BST layer serving as a nucleation layer. For example, a BST layer having a composition of Ba.sub.x Sr.sub.1-x TiO.sub.3, where X has a range of about 0 to 0.4. Another BST layer having a composition of Ba.sub.x Sr.sub.1-x TiO.sub.3 is provided, where X is about 0.5. Such a method provides a high dielectric film with a very smooth surface, compared to conventional methods.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.