Method for bonding compounds semiconductor wafers to create an ohmic interface
US5783477A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Apr 14, 1997 |
| Grant date | Jul 21, 1998 |
| Priority date | — |
| Expiry date | Apr 14, 2017 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2924/12041
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method for forming an ohmic interface between unipolar (isotype) compound semiconductor wafers without a metallic interlayer and the semiconductor devices formed with these ohmic interfaces are disclosed. The ohmic interface is formed by simultaneously matching the crystallographic orientation of the wafer surfaces and the rotational alignment within the surfaces of the two wafers and then subjecting them to applied uniaxial pressure under high temperatures to form the bonded ohmic interface. Such an ohmic interface is required for the practical implementation of devices wherein electrical current is passed from one bonded wafer to another.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.