Photo-assisted annealing process for activation of acceptors in semiconductor compound layers
US5786233A · kind A · utility
13Cited by
9References
20Claims
0Family size
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Key dates
| Filing date | Feb 20, 1996 |
| Grant date | Jul 28, 1998 |
| Priority date | — |
| Expiry date | Feb 20, 2016 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/02551
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Active acceptor concentrations of p-doped II-VI and III-V semiconductor compound layer provided by chemical vapor deposition are increased by photo-assisted annealing.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.