Method for producing a channel region layer in a voltage controlled semiconductor device

US5786251A · kind A · utility

Assignee

• ABB RESEARCH LTD. · CH

Inventors

• Christopher Harris · Sollentuna, SE
• Mietek Bakowski · Gately Drive, SE
• Lennart Zdansky
• Bo Bijlenga · Skultuna, SE

Key dates

• Filing date: Jul 9, 1996
• Grant date: Jul 28, 1998
• Expiry date: Jul 9, 2016

Classification

• Technology area (CPC Y): Emerging Cross-Sectional Technologies
• CPC primary: Y10S438/931

Abstract

In a method for producing a channel region layer in a SiC-layer for providing a voltage-controlled semiconductor device a layer of silicon being one of a) polycrystalline and b) amorphous is applied on top of the SiC-layer, an aperture is etched in the silicon layer extending to the SiC-layer, a surface layer of a certain thickness of the silicon layer is oxidized, and the lateral extension of the channel region layer is determined by removing the oxidized layer and carrying out a further implantation into the area exposed by the so formed enlarged aperture.