Method of forming a metallic oxide semiconductor
US5786255A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | May 27, 1997 |
| Grant date | Jul 28, 1998 |
| Priority date | — |
| Expiry date | May 27, 2017 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D64/259
Abstract
A method of forming MOS components provides that after the formation of the gate and the doped source/drain regions, a polysilicon layer is deposited and planarized using a chemical-mechanical polishing method. The resulting unremoved polysilicon layer acts as source/drain terminals. Through these arrangements, the ion doped source/drain regions will have shallow junctions, yet their junction integrity will not be compromised by subsequent contact window etching and metallization processes. Furthermore, the front-end processes for forming the MOS component provide a good planar surface that offers great convenience for the performance of subsequent back-end processes.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.