Coming Chen
40Patents
13h-index
19Co-inventors
78Inventor score
Filing activity: Dec 12, 1996 → Oct 28, 2019
Most-cited inventions
| Patent | Title | Area | Cited by | Status |
|---|---|---|---|---|
| US5950090A | Method for fabricating a metal-oxide semiconductor transistor | Electricity | 94 | Expired |
| US5933748A | Shallow trench isolation process | Electricity | 53 | Expired |
| US5786255A | Method of forming a metallic oxide semiconductor | Electricity | 28 | Expired |
| US5770508A | Method of forming lightly doped drains in metalic oxide semiconductor components | Electricity | 28 | Expired |
| US6004852A | Manufacture of MOSFET having LDD source/drain region | Electricity | 28 | Expired |
| US6177336A | Method for fabricating a metal-oxide semiconductor device | Electricity | 27 | Expired |
| US6306722A | Method for fabricating shallow trench isolation structure | Electricity | 27 | Expired |
| US6475865B1 | Method of fabricating semiconductor device | Electricity | 25 | Expired |
| US5958795A | Chemical-mechanical polishing for shallow trench isolation | Electricity | 23 | Expired |
| US6169012A | Chemical mechanical polishing for forming a shallow trench isolation structure | Emerging Cross-Sectional Technologies | 23 | Expired |
| US6174778A | Method of fabricating metal oxide semiconductor | Electricity | 17 | Expired |
| US6200840A | Method for producing PMOS devices | Electricity | 13 | Expired |
| US6178543A | Method of designing active region pattern with shift dummy pattern | Electricity | 13 | Expired |
| US6187645A | Method for manufacturing semiconductor device capable of preventing gate-to-drain capacitance and eliminating birds beak formation | Electricity | 13 | Expired |
| US6083827A | Method for fabricating local interconnect | Electricity | 12 | Expired |
| US6136713A | Method for forming a shallow trench isolation structure | Electricity | 12 | Expired |
| US6140227A | Method of fabricating a glue layer of contact/via | Electricity | 12 | Expired |
| US6274450A | Method for implementing metal oxide semiconductor field effect transistor | Electricity | 11 | Expired |
| US7018906B2 | Chemical mechanical polishing for forming a shallow trench isolation structure | Emerging Cross-Sectional Technologies | 10 | Expired |
| US6015755A | Method of fabricating a trench isolation structure using a reverse mask | Electricity | 10 | Expired |
| US6177332A | Method of manufacturing shallow trench isolation | Electricity | 8 | Expired |
| US6063689A | Method for forming an isolation | Emerging Cross-Sectional Technologies | 7 | Expired |
| US6838357B2 | Chemical mechanical polishing for forming a shallow trench isolation structure | Emerging Cross-Sectional Technologies | 7 | Expired |
| US6232161A | Method for forming a dummy active pattern | Electricity | 7 | Expired |
| US6894364B2 | Capacitor in an interconnect system and method of manufacturing thereof | Electricity | 7 | Expired |
Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.