Fermi-threshold field effect transistors including source/drain pocket implants and methods of fabricating same
US5786620A · kind A · utility
37Cited by
29References
29Claims
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Key dates
| Filing date | Mar 8, 1996 |
| Grant date | Jul 28, 1998 |
| Priority date | — |
| Expiry date | Mar 8, 2016 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D62/378
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A Fermi-FET, including but not limited to a tub-FET, a contoured-tub Fermi-FET or a short channel Fermi-FET includes a drain extension region of the same conductivity type as the drain region and a drain pocket implant region of opposite conductivity type from the drain region. The drain pocket implant region acts as a drain field stop to reduce or prevent drain-to-source field reach-through. Reduced low drain field threshold voltage, significantly reduced drain induced barrier lowering and reduced threshold dependence on channel length may be obtained, resulting in higher performance in short channels.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.