Thunderbird Technologies, Inc.
32Patents
0Active
32Granted
34Portfolio score
Filing activity: Mar 2, 1989 → Nov 22, 2000
Most-cited patents
| Patent | Title | Area | Cited by | Status |
|---|---|---|---|---|
| US5151759A | Fermi threshold silicon-on-insulator field effect transistor | Electricity | 198 | Expired |
| US5885876A | Methods of fabricating short channel fermi-threshold field effect transistors including drain field termination region | Electricity | 108 | Expired |
| US5438007A | Method of fabricating field effect transistor having polycrystalline silicon gate junction | Electricity | 66 | Expired |
| US4984043A | Fermi threshold field effect transistor | Electricity | 59 | Expired |
| US4990974A | Fermi threshold field effect transistor | Electricity | 58 | Expired |
| US5525822A | Fermi threshold field effect transistor including doping gradient regions | Electricity | 38 | Expired |
| US5786620A | Fermi-threshold field effect transistors including source/drain pocket implants and methods of fabricating same | Electricity | 37 | Expired |
| US5698884A | Short channel fermi-threshold field effect transistors including drain field termination region and methods of fabricating same | Electricity | 34 | Expired |
| US6555872B1 | Trench gate fermi-threshold field effect transistors | Electricity | 34 | Expired |
| US5543654A | Contoured-tub fermi-threshold field effect transistor and method of forming same | Electricity | 28 | Expired |
| US5369295A | Fermi threshold field effect transistor with reduced gate and diffusion capacitance | Emerging Cross-Sectional Technologies | 27 | Expired |
| US5371396A | Field effect transistor having polycrystalline silicon gate junction | Electricity | 25 | Expired |
| US5374836A | High current fermi threshold field effect transistor | Emerging Cross-Sectional Technologies | 21 | Expired |
| US5194923A | Fermi threshold field effect transistor with reduced gate and diffusion capacitance | Electricity | 17 | Expired |
| US5814869A | Short channel fermi-threshold field effect transistors | Electricity | 13 | Expired |
| US5384730A | Coincident activation of pass transistors in a random access memory | Physics | 12 | Expired |
| US5030853A | High speed logic and memory family using ring segment buffer | Electricity | 12 | Expired |
| US5222039A | Static random access memory (SRAM) including Fermi-threshold field effect transistors | Physics | 11 | Expired |
| US5247212A | Complementary logic input parallel (CLIP) logic circuit family | Electricity | 11 | Expired |
| US5001367A | High speed complementary field effect transistor logic circuits | Electricity | 10 | Expired |
| US5424980A | Self-timing random access memory | Physics | 10 | Expired |
| US5440160A | High saturation current, low leakage current fermi threshold field effect transistor | Electricity | 10 | Expired |
| US5357480A | Address change detecting system for a memory | Physics | 10 | Expired |
| US5304874A | Differential latching inverter and random access memory using same | Physics | 9 | Expired |
| US5388075A | Read and write timing system for random access memory | Physics | 9 | Expired |
Source: USPTO / EPO open patent data. Counts and citation impact are objective bibliographic measures.