Method for forming single sin layer as passivation film
US5788767A · kind A · utility
4Cited by
2References
17Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Dec 31, 1996 |
| Grant date | Aug 4, 1998 |
| Priority date | — |
| Expiry date | Dec 31, 2016 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S117/905
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
The present invention is a method for using a single SiN layer as a passivation film. The single layer SiN can be strengthened to withstand stress by adjusting the process parameters during formation of the SiN layer. In general, the process can be changed by increasing the low frequency power 5% during the deposition. Alternatively, the pressure of the SiN deposition may be decreased about 20% in pressure.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.