Jun-Cheng Ko
7Patents
5h-index
4Co-inventors
48Inventor score
Filing activity: Dec 31, 1996 → Jun 29, 2001
Most-cited inventions
| Patent | Title | Area | Cited by | Status |
|---|---|---|---|---|
| US5817579A | Two step plasma etch method for forming self aligned contact | Electricity | 76 | Expired |
| US5854135A | Optimized dry etching procedure, using an oxygen containing ambient, for small diameter contact holes | Electricity | 20 | Expired |
| US5915198A | Contact process using taper contact etching and polycide step | Emerging Cross-Sectional Technologies | 8 | Expired |
| US6211557A | Contact structure using taper contact etching and polycide step | Emerging Cross-Sectional Technologies | 6 | Expired |
| US6069077A | UV resist curing as an indirect means to increase SiN corner selectivity on self-aligned contact etching process | Electricity | 5 | Expired |
| US5788767A | Method for forming single sin layer as passivation film | Emerging Cross-Sectional Technologies | 4 | Expired |
| US6861362B2 | Self-aligned contact process implementing bias compensation etch endpoint detection and methods for implementing the same | Electricity | 3 | Expired |
Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.