Field implant for semiconductor device
US5789269A · kind A · utility
36Cited by
7References
14Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Aug 6, 1996 |
| Grant date | Aug 4, 1998 |
| Priority date | — |
| Expiry date | Aug 6, 2016 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/762
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
The concentration of impurities at the surface of the semiconductor device adjacent and under the bird's beak of a field oxide region is reduced by employing sidewall spacers prior to field implantation. The resulting semiconductor device exhibits reduced sidewall junction capacitance and leakage, an increased junction breakdown voltage and a reduced narrow channel effect.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.