Cleaning solution for use on a semiconductor wafer following chemical-mechanical polishing of the wafer and method for using same
US5789360A · kind A · utility
25Cited by
14References
14Claims
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Key dates
| Filing date | Jan 2, 1997 |
| Grant date | Aug 4, 1998 |
| Priority date | — |
| Expiry date | Jan 2, 2017 |
Classification
- Technology area (CPC C)Chemistry; Metallurgy
- CPC primaryC11D2111/22
- WIPO fieldBasic materials chemistry
- WIPO sectorChemistry
Abstract
A solution and method for cleaning a silicon wafer following a chemical-mechanical polishing process is disclosed. The cleaning solution being 0.1% to 99% by total solution volume of phosphoric acid, 0.1% to 25% by total solution volume of fluoroboric acid, and the balance of the solution, deionized water.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.