Semiconductor light-emitting device
US5789773A · kind A · utility
10Cited by
3References
5Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Oct 1, 1996 |
| Grant date | Aug 4, 1998 |
| Priority date | — |
| Expiry date | Oct 1, 2016 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01S5/34326
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
In an AlGaInP type semiconductor light-emitting device, an n-type AlGaInP cladding layer and a p-type AlGaInP cladding layer are deposited so as to interpose an active layer made of GaInP or AlGaInP therebetween. Light guiding layers are provided between the active layer and the n-type cladding layer, and/or, between the active layer and the p-type cladding layer, respectively. The p-type cladding layer is doped with Be serving as a p-type dopant. The active layer, the p-type cladding layer and the light guiding layers are doped with Si which may serve as an n-type dopant.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.