Electrical apparatus with a metallic layer coupled to a lower region of a substrate and a metallic layer coupled to a lower region of a semiconductor device
US5789817A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Nov 15, 1996 |
| Grant date | Aug 4, 1998 |
| Priority date | — |
| Expiry date | Nov 15, 2016 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2924/3011
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
An electrical apparatus having a first substrate, a first metallic layer, a semiconductor device, a second metallic layer, and a metallic interconnecting structure is described. The first substrate is of a semiconductor material and has an upper region and a lower region. The substrate provides an electrical path between the upper region and the lower region. The first metallic layer is coupled to the lower region of the substrate. The first metallic layer provides a first external electrical connection. The semiconductor device has an upper region and a lower region. The second metallic layer is coupled to the lower region of the semiconductor device. The second metallic layer provides a second external electrical connection. The metallic interconnecting structure electrically couples the upper region of the first substrate to the upper region of the semiconductor device. A bridge apparatus is also described. In addition, a method of fabricating an electrical apparatus is described.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.