Magnetic devices and sensors based on perovskite manganese oxide materials
US5792569A · kind A · utility
97Cited by
6References
17Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Mar 19, 1996 |
| Grant date | Aug 11, 1998 |
| Priority date | — |
| Expiry date | Mar 19, 2016 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10T428/1171
- WIPO fieldAudio-visual technology
- WIPO sectorElectrical engineering
Abstract
A tri-layer thin film magnetoresistive device using doped perovskite manganate thin films as ferromagnetic elements, wherein a current is transported through the tri-layer structure, is disclosed. A large magnetoresistance change of about a factor of two is obtained in a low magnetic field, less than 150 Oe, which is close to the coercivity of the material of the elements. This device demonstrates that low-field spin-dependent transport in the manganates can be accomplished and that the magnitude of the resulting magnetoresistance is suitable for magnetoresistive field sensor applications.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.