Philip L. Trouilloud
52Patents
12h-index
32Co-inventors
84Inventor score
Filing activity: Jun 8, 1993 → Jul 18, 2017
Most-cited inventions
| Patent | Title | Area | Cited by | Status |
|---|---|---|---|---|
| US6385082B1 | Thermally-assisted magnetic random access memory (MRAM) | Physics | 213 | Expired |
| US6072718A | Magnetic memory devices having multiple magnetic tunnel junctions therein | Physics | 158 | Expired |
| US6104633A | Intentional asymmetry imposed during fabrication and/or access of magnetic tunnel junction devices | Physics | 108 | Expired |
| US5792569A | Magnetic devices and sensors based on perovskite manganese oxide materials | Emerging Cross-Sectional Technologies | 97 | Expired |
| US5946228A | Limiting magnetic writing fields to a preferred portion of a changeable magnetic region in magnetic devices | Physics | 59 | Expired |
| US6452764B1 | Limiting magnetoresistive electrical interaction to a preferred portion of a magnetic region in magnetic devices | Electricity | 38 | Expired |
| US6538919B1 | Magnetic tunnel junctions using ferrimagnetic materials | Electricity | 33 | Expired |
| US6724674B2 | Memory storage device with heating element | Electricity | 31 | Expired |
| US6590750B2 | Limiting magnetoresistive electrical interaction to a preferred portion of a magnetic region in magnetic devices | Electricity | 29 | Expired |
| US6368878B1 | Intentional asymmetry imposed during fabrication and/or access of magnetic tunnel junction devices | Physics | 28 | Expired |
| US6927569B2 | Techniques for electrically characterizing tunnel junction film stacks with little or no processing | Emerging Cross-Sectional Technologies | 17 | Expired |
| US9495627B1 | Magnetic tunnel junction based chip identification | Electricity | 13 | Active |
| US6667897B1 | Magnetic tunnel junction containing a ferrimagnetic layer and anti-parallel layer | Electricity | 11 | Expired |
| US5392169A | Electrical means to diminish read-back signal waveform distortion in recording heads | Physics | 9 | Expired |
| US7453747B2 | Active compensation for operating point drift in MRAM write operation | Physics | 9 | Active |
| US8866207B2 | Magnetic stacks with perpendicular magnetic anisotropy for spin momentum transfer magnetoresistive random access memory | Electricity | 8 | Active |
| US7768809B2 | Wall nucleation propagation for racetrack memory | Physics | 8 | Active |
| US8835889B1 | Parallel shunt paths in thermally assisted magnetic memory cells | Electricity | 7 | Active |
| US8102174B2 | Techniques for electrically characterizing tunnel junction film stacks with little or no processing | Emerging Cross-Sectional Technologies | 7 | Active |
| US6958929B2 | Sensor compensation for environmental variations for magnetic random access memory | Physics | 7 | Expired |
| US7102916B2 | Method and structure for selecting anisotropy axis angle of MRAM device for reduced power consumption | Physics | 4 | Expired |
| US7133309B2 | Method and structure for generating offset fields for use in MRAM devices | Electricity | 4 | Expired |
| US6623158B2 | Method and apparatus for thermal proximity imaging using pulsed energy | Physics | 3 | Expired |
| US7782660B2 | Magnetically de-coupling magnetic memory cells and bit/word lines for reducing bit selection errors | Electricity | 3 | Active |
| US7061787B2 | Field ramp down for pinned synthetic antiferromagnet | Physics | 3 | Expired |
Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.