Method for forming silicon-germanium/Si/silicon dioxide heterostructure using germanium implant
US5792679A · kind A · utility
196Cited by
10References
34Claims
0Family size
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Key dates
| Filing date | Aug 30, 1993 |
| Grant date | Aug 11, 1998 |
| Priority date | — |
| Expiry date | Aug 30, 2013 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D86/201
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method for fabricating a GeSi/Si/SiO.sub.2 heterostructure comprises the steps of: (a) providing a monocrystalline Si substrate; (b) defining a GeSi region within the Si substrate while leaving a Si cap overlying the GeSi region, the Si cap being an integral part of the monocrystalline substrate; and (c) oxidizing part of the Si cap to thereby produce the GeSi/Si/SiO.sub.2 heterostructure.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.