Self-aligned contact wiring process for SI devices
US5792703A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Mar 20, 1996 |
| Grant date | Aug 11, 1998 |
| Priority date | — |
| Expiry date | Mar 20, 2016 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/76897
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method of making electrical contacts to device regions in a substrate is taught. A first set of contacts are self-aligning and borderless and a second set of contacts are bordered. The method comprises the steps of providing a first insulating layer over the substrate and forming the first set of contacts in a self-aligned and borderless manner. This is followed by forming a second insulating layer over said first insulating layer, in which the second set of contacts that are bordered to the gate electrode and peripheral diffusions are formed through the first and second insulating layers. In addition, bordered contacts to the first set of borderless contacts are formed through the second insulating layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.