Hybrid transistor structure with widened leads for reduced thermal resistance
US5793067A · kind A · utility
8Cited by
1References
18Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Jul 5, 1996 |
| Grant date | Aug 11, 1998 |
| Priority date | — |
| Expiry date | Jul 5, 2016 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2924/0002
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
An electrode lead of a transistor extends beyond other electrode leads of the transistor, is disposed adjacent to the corresponding electrode, and is disposed outside the other electrode leads for heat radiation. A wider part of the electrode lead may have a via hole or a thick metal plating for heat radiation. Further, the electrode is preferably grounded and is connected to an external input terminal to which heat is transferred.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.