Read circuit for magnetic memory array using magnetic tunnel junction devices
US5793697A · kind A · utility
Assignee
Inventor
Key dates
| Filing date | Feb 18, 1997 |
| Grant date | Aug 11, 1998 |
| Priority date | — |
| Expiry date | Feb 18, 2017 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG11C11/1675
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
A sensing circuit reads the magnetic state of individual memory cells making up a nonvolatile magnetic random access memory (MRAM) array. Each memory cell is a magnetic tunnel junction (MTJ) element and a diode electrically connected in series. Each MTJ is formed of a pinned ferromagnetic layer whose magnetization direction is prevented from rotating, a free ferromagnetic layer whose magnetization direction is free to rotate between states of parallel and antiparallel to the fixed magnetization of the pinned ferromagnetic layer, and an insulating tunnel barrier between and in contact with the two ferromagnetic layers. The memory cells in the array are controlled by only two lines, and the write currents to change the magnetic state of an MTJ, by use of the write currents' inherent magnetic fields to rotate the magnetization of the free layer, do not pass through the tunnel barrier layer. The magnetic state of a memory cell is read by reducing the voltage on one of the lines while the voltage on the other line is clamped.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.