Type II quantum well laser with enhanced optical matrix
US5793787A · kind A · utility
50Cited by
6References
29Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Jan 16, 1996 |
| Grant date | Aug 11, 1998 |
| Priority date | — |
| Expiry date | Jan 16, 2016 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01S5/34306
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
A type II multiple quantum well, 4 constituent active region, optically clad electrically pumped and optically pumped laser for emitting at a wavelength greater than or equal to about 2.5 microns is disclosed. The active region comprises one or more periods, each period further comprising a barrier layer, a first conduction band layer, a valence band layer and a second conduction band layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.