Semiconductor light emitting element with p-type non-alloy electrode including a platinum layer and method for fabricating the same
US5793788A · kind A · utility
19Cited by
2References
9Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Aug 1, 1996 |
| Grant date | Aug 11, 1998 |
| Priority date | — |
| Expiry date | Aug 1, 2016 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10H20/825
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
A semiconductor light emitting element includes a p-type electrode which in turn includes a contact electrode layer including at least a Pt layer. Particularly, the semiconductor light emitting element further includes a layered structure including at least an n-type cladding layer, an active layer, and a p-type cladding layer; and a p-type contact layer formed above the layered structure, and the contact electrode layer is formed on the p-type contact layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.