Semiconductor substrate cleaning method and semiconductor device fabrication method
US5795494A · kind A · utility
10Cited by
5References
11Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Aug 10, 1995 |
| Grant date | Aug 18, 1998 |
| Priority date | — |
| Expiry date | Aug 10, 2015 |
Classification
- Technology area (CPC B)Performing Operations; Transporting
- CPC primaryB08B3/10
- WIPO fieldChemical engineering
- WIPO sectorChemistry
Abstract
Semiconductor substrates are immersed in pure water having a lowered dissolved-oxygen concentration and heated to a temperature above 60.degree. C., in an atmosphere which keeps the dissolved oxygen concentration in pure water, in order to etch oxide films on surfaces of the semiconductor substrates for cleaning the surfaces of the semiconductor substrates. According to the present invention, contaminants and residual chemicals can be effectively removed without adding any chemical treating step. The cleaning can be effective without increasing the number of chemicals, and improved throughputs of the cleaning step can be obtained.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.