Radiation-hardening of SOI by ion implantation into the buried oxide layer
US5795813A · kind A · utility
35Cited by
8References
14Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | May 31, 1996 |
| Grant date | Aug 18, 1998 |
| Priority date | — |
| Expiry date | May 31, 2016 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/76243
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
The radiation hardness of a silicon-on-insulator structure is improved by planting dopant ions, such as Si, into the buried oxide layer. The dopant ions are implanted in the buried oxide layer, near, but not at, the active Si layer/buried oxide layer interface. This implantation creates electron traps/recombination centers in the buried oxide layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.