Patrick McMarr
6Patents
4h-index
5Co-inventors
46Inventor score
Filing activity: May 31, 1996 → Feb 28, 2006
Most-cited inventions
| Patent | Title | Area | Cited by | Status |
|---|---|---|---|---|
| US5795813A | Radiation-hardening of SOI by ion implantation into the buried oxide layer | Electricity | 35 | Expired |
| US7271389B2 | Neutron detection device and method of manufacture | Electricity | 20 | Expired |
| US6071791A | Radiation-hardening of microelectronic devices by ion implantation into the oxide and annealing | Electricity | 19 | Expired |
| US6551898B1 | Creation of a polarizable layer in the buried oxide of silicon-on-insulator substrates for the fabrication of non-volatile memory | Electricity | 6 | Expired |
| US7112850B2 | Non-volatile memory device with a polarizable layer | Electricity | 1 | Expired |
| US8021991B2 | Technique to radiation-harden trench refill oxides | Electricity | 0 | Expired |
Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.