Metal semiconductor field effect transistor (MESFET) device with single layer integrated metal
US5796131A · kind A · utility
5Cited by
7References
22Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Jul 22, 1996 |
| Grant date | Aug 18, 1998 |
| Priority date | — |
| Expiry date | Jul 22, 2016 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D64/64
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A periodic table group III-IV metal semiconductor metal field-effect transistor device is described. The disclosed device includes single metalization for ohmic and Schottky barrier contacts, an elective permanent etch stop layer, a non-alloyed ohmic contact semiconductor layer and a permanent non photosensitive secondary mask element. The invention may be achieved with one of an all optical lithographic process and a combined optical and electron beam lithographic process The disclosed field-effect transistor device is of reduced fabrication cost, increased dimensional accuracy and state of the art electrical performance.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.