Nonvolatile semiconductor memory device and method for manufacturing same
US5796648A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Dec 10, 1996 |
| Grant date | Aug 18, 1998 |
| Priority date | — |
| Expiry date | Dec 10, 2016 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D1/692
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
A nonvolatile semiconductor memory device has a ferroelectric cell and a paraelectric cell. The ferroelectric cell includes a first thin-film capacitor which has a first lower electrode formed on a substrate, a first dielectric film grown on the first lower electrode and a first upper electrode formed on the first dielectric film, and a first switching transistor connected to the first thin-film capacitor. The paraelectric cell includes a second thin-film capacitor which has a second lower electrode, a second dielectric film grown on the second lower electrode and a second upper electrode formed on the second dielectric film, and a second switching transistor connected to the second thin-film capacitor. The first lower electrode is provided such that the first dielectric film has ferroelectricities, while the second lower electrode is provided such that the second dielectric film has paraelectricities.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.