Method for fabricating heterojunction bipolar transistor
US5798277A · kind A · utility
Assignees
Inventors
Key dates
| Filing date | Oct 15, 1996 |
| Grant date | Aug 25, 1998 |
| Priority date | — |
| Expiry date | Oct 15, 2016 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S148/072
Abstract
An improved method for fabricating a heterojunction bipolar transistor which includes the steps of forming a buried collector, a collector thin film, and a collector sinker on a semiconductor substrate in order, forming a first silicon oxide film, a base electrode polysilicon layer, a nitride film, and an oxidation film on a resulting substrate exposing the first silicon oxidation film, forming a spacer insulation film at the lateral side of the exposed region, and defining an activation region, exposing the collector thin film of the activation region using a mask, and forming an auxiliary lateral film for an isolation of the device, forming a selective collector region by ion-implantating a dopant to the activation region which is limited by the auxiliary lateral film, removing the auxiliary lateral film, etching the exposed portion in an anisotropic etching method, and forming a shallow trench for a device isolation, forming a polysilicon lateral film to have a height which is the same as the height of the base electrode polysilicon layer on the shallow trench, and forming a self-aligned base.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.