Method for producing a semiconductor layer of SiC of the 3C-polytype and a semiconductor device having an insulator between a carrier and the active semiconductor layer
US5798293A · kind A · utility
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6References
10Claims
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Key dates
| Filing date | Feb 25, 1997 |
| Grant date | Aug 25, 1998 |
| Priority date | — |
| Expiry date | Feb 25, 2017 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S438/931
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
In a method for producing a semiconductor layer (8) of SiC of the 3C-polytype on top of a semiconductor substrate layer (6) the wafer-bonding technique is utilised. Two amorphous layers are placed face to face and bonded by heating them, and the piece so obtained is annealed at such a high temperature that the material of the amorphous layers is allowed to flow for relaxing a 3C-SiC-layer (4) on top thereof. A second layer (8) of 3C-SiC is after that epitaxially regrown on top of said relaxed 3C-SiC-layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.