Semiconductor substrate having a serious effect of gettering heavy metal and method of manufacturing the same
US5798294A · kind A · utility
Assignee
Inventor
Key dates
| Filing date | May 19, 1995 |
| Grant date | Aug 25, 1998 |
| Priority date | — |
| Expiry date | May 19, 2015 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10T428/12528
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A silicon dioxide layer overlies a monocrystal silicon substrate and has a first upper surface. A first monocrystal silicon layer overlies the first upper surface and has phosphorus atoms diffused. A second monocrystal silicon layer overlies the first monocrystal silicon layer. The first monocrystal silicon layer may have phosphorus or silicon atoms each of which has a positive electric charge instead of the phosphorus atoms diffused. A lattice mismatching layer may overlie the first upper surface instead of the first monocrystal silicon layer. The lattice mismatching layer has parts in each of which misfit dislocation is caused. The first and the second monocrystal silicon layers may overlie the monocrystal silicon substrate and layer, respectively. In this event, a silicon glass layer is interposed between the first and the second monocrystal silicon layers. The second monocrystal silicon layer has phosphorus atoms diffused.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.