Semiconductor device and method of manufacturing same
US5801445A · kind A · utility
13Cited by
5References
10Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Mar 14, 1997 |
| Grant date | Sep 1, 1998 |
| Priority date | — |
| Expiry date | Mar 14, 2017 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2924/2076
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A semiconductor device has an electrode interposed between an interlayer insulation film and a wire which is bonded thereto. A main component of the electrode is aluminum and the electrode contains fine-grained silicon in a concentration of 0.1 to 0.6 weight %. As a result, even if large ultrasonic power, a large load or the like is applied to the electrode when the wire is wire-bonded, damage such as the formation of a crack hardly generates at the interlayer insulation film. Therefore, the occurrence of defects due to the wire-bonding can be reduced.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.