Form simulation device and its simulating method by the use of the Monte Carlo method
US5801971A · kind A · utility
Assignee
Inventor
Key dates
| Filing date | Dec 18, 1996 |
| Grant date | Sep 1, 1998 |
| Priority date | — |
| Expiry date | Dec 18, 2016 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01J37/32935
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
A form simulation device comprising a bulk plasma analytical unit making an analysis of a bulk plasma region and calculating potential, density of particles and change of sheath length with time within plasma when RF bias is given there, a sheath plasma analytical unit deciding the type of incident particle on the basis of the obtained particle density, a surface reaction calculation unit deciding absorbed material on the surface of the material to be etched, which the incident particle collides with and deciding the type of reaction between the absorbed material and the incident particle decided by the sheath plasma analytical unit, and a form calculation unit calculating the form of the material to be etched depending on the type of reaction decided by said surface reaction calculation unit.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.