Semiconductor layer pressure switch
US5802911A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Sep 13, 1994 |
| Grant date | Sep 8, 1998 |
| Priority date | — |
| Expiry date | Sep 13, 2014 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01H59/0009
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
A pressure switch element (1) including a semiconductor layer (3) having a diaphragm portion (5) in its center and a plate (2) having a through hole communicating with the exterior, which are stacked one on another so as to define a gas space (6) between the diaphragm portion of the semiconductor layer and the plate. The element (1) further includes an insulating layer (4) provided on the lower surface of the diaphragm portion (5), a first switch electrode (9) provided on the lower surface of the insulating layer (4), and a second switch electrode (10) behaving as a fixed electrode provided on the plate (2), such that chattering is prevented with a simple structure without using a complex electronic circuit.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.