Microwave plasma processing method and apparatus
US5804033A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Mar 10, 1993 |
| Grant date | Sep 8, 1998 |
| Priority date | — |
| Expiry date | Mar 10, 2013 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01J37/32266
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
The present invention relates to a microwave plasma processing method and apparatus. According to the present invention, the microwaves are introduced into the electric discharge means in correspondence with only the traveling direction thereof, whereby uniformity in a plasma density distribution corresponding to the surface to-be-processed of the sample can be sharply enhanced, so that the sample processed by utilizing such plasma can attain an enhanced processing homogeneity within the surface to be processed. In addition, homogeneity and stability of the plasma are improved by inserting a cavity resonator between the microwave generator and plasma processing (plasma generating) chamber, and coupling the cavity resonator and plasma processing chamber such that microwaves substantially only of a desired mode (e.g., TE.sub.11) pass into the plasma processing chamber. Such coupling to provide microwaves substantially only of circular TE.sub.11 mode can be achieved by providing the coupling such that a ratio of diameter of the discharge block, where the plasma is generated, to the diameter of the cavity resonator, is 0.345.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.