Method for producing a channel region layer in a sic-layer for a voltage controlled semiconductor device
US5804483A · kind A · utility
74Cited by
10References
14Claims
0Family size
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Inventor
Key dates
| Filing date | Aug 6, 1996 |
| Grant date | Sep 8, 1998 |
| Priority date | — |
| Expiry date | Aug 6, 2016 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S438/931
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
In a method for producing a channel region layer in a SiC-layer for producing a voltage controlled semiconductor device n-type dopants and p-type dopants are implanted into a near-surface layer of the SiC layer. The p-type dopants implanted have a higher diffusion rate in SiC than the n-type dopants implanted. The SiC-layer is then heated at such a temperature that p-type dopants implanted diffuse from the near-surface layer into the surrounding regions of the SiC-layer being lightly n-doped to such a degree that a channel region layer in which p-type dopants dominates is created.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.