GaAs photoconductive semiconductor switch
US5804815A · kind A · utility
15Cited by
2References
14Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Jul 5, 1996 |
| Grant date | Sep 8, 1998 |
| Priority date | — |
| Expiry date | Jul 5, 2016 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10F30/00
Abstract
A high gain, optically triggered, photoconductive semiconductor switch (PCSS) implemented in GaAs as a reverse-biased pin structure with a passivation layer above the intrinsic GaAs substrate in the gap between the two electrodes of the device. The reverse-biased configuration in combination with the addition of the passivation layer greatly reduces surface current leakage that has been a problem for prior PCSS devices and enables employment of the much less expensive and more reliable DC charging systems instead of the pulsed charging systems that needed to be used with prior PCSS devices.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.