Albert G. Baca
13Patents
9h-index
41Co-inventors
72Inventor score
Filing activity: Dec 28, 1988 → Apr 16, 2019
Most-cited inventions
| Patent | Title | Area | Cited by | Status |
|---|---|---|---|---|
| US5479033A | Complementary junction heterostructure field-effect transistor | Electricity | 223 | Expired |
| US5814238A | Method for dry etching of transition metals | Electricity | 175 | Expired |
| US5041393A | Fabrication of GaAs integrated circuits | Emerging Cross-Sectional Technologies | 35 | Expired |
| US6765242B1 | Npn double heterostructure bipolar transistor with ingaasn base region | Electricity | 25 | Expired |
| US5804815A | GaAs photoconductive semiconductor switch | Electricity | 15 | Expired |
| US9761675B1 | Resistive field structures for semiconductor devices and uses therof | Electricity | 13 | Active |
| US7137612B2 | High recovery metering valve | Mechanical Engineering; Lighting; Heating | 12 | Expired |
| US10388753B1 | Regrowth method for fabricating wide-bandgap transistors, and devices made thereby | Electricity | 11 | Active |
| US6083781A | Method for manufacturing compound semiconductor field-effect transistors with improved DC and high frequency performance | Electricity | 10 | Expired |
| US6248992A | High gain photoconductive semiconductor switch having tailored doping profile zones | Electricity | 7 | Expired |
| US10505031B1 | High current density, low contact resistance wide bandgap contacts | Electricity | 2 | Active |
| US6504859B1 | Light sources based on semiconductor current filaments | Electricity | 1 | Expired |
| US10553697B1 | Regrowth method for fabricating wide-bandgap transistors, and devices made thereby | Electricity | 0 | Active |
Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.