Infrared ray detection device and solid-state imaging apparatus
US5804827A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Oct 25, 1996 |
| Grant date | Sep 8, 1998 |
| Priority date | — |
| Expiry date | Oct 25, 2016 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10F39/8057
- WIPO fieldAudio-visual technology
- WIPO sectorElectrical engineering
Abstract
An infrared ray detection device of this invention includes (i) a silicon substrate, (ii) a plurality of light-receiving portions which are disposed at predetermined intervals on one surface of the silicon substrate, and receive infrared rays, (iii) a plurality of reading portions which are disposed on the one surface of the silicon substrate at positions adjacent to the plurality of light-receiving portions, and read outputs from the plurality of light-receiving portions, and (iv) an impurity-doped silicon layer which are disposed in contact with the other surface of the silicon substrate and contains a donor or acceptor impurity at a concentration high enough to absorb infrared rays passing through the silicon substrate. Also, a solid-state imaging apparatus of this invention includes (1) a light detection device having detection sensitivity to light in a first wavelength region and light in a second wavelength region shorter than the first wavelength region, and (2) an adjustment mechanism which is disposed in front of the light detection device, consists of a member that transmits the light in the first wavelength region and shields the light in the second wavelength region, an…
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.